Cutting:
Thinning:
Polishing:
Coating:
Cleaning:
Drying:
- Freeze dryer
- Critical point dryer (CPD)
The Cross Section Polisher is used for the preparation of cross sections for REM- EPMA- and SAM measurements. Any hard or soft samples, as well as compsites materials, are formed with minimal damage and the result is a smooth surface on nearly any metal, ceramic, glas, paper or synthetic material.
An argon beam polishes cross sections on a large, 1mm², area. The grazing incident angle minimizes Ar contamination. The sample can be partially protected from the Ar beam using a shadow mask system.
An embedding of the sample is usually not necessary.
Accelaration voltage: | 2-6kV |
Ionbeam width (FWHM – full width half maximum): | 500µm (at 6kV on Si sample) |
Sputtering speed: | 100µm/ hours on Si |
Sample size (max.): | 11mm (W) x 10mm (L) x 2mm (H) |
Travel distance: | +/- 10mm (X-Achse), +/- 3mm (Y-Achse) |
Rotation: | +/- 5° |
Gas for ion source: | Argon |
Pressure gauge: | Penning tube |
Main vacuum pump: | Turbomolecular pump(TMP) 10-4 Pa |
Pre pump: | Rotary vane pump |
Alignment camera: | Magnification 70 x (on a 16,5 cm display) |