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Prof. Dr. Franz-Josef Tegude

Anschrift
Lotharstr. 55 (LT/ZHO)
47057 Duisburg
Raum
LT 207
Telefon
+49 201 183 6845
E-Mail
Franz.Tegude@uni-due.de
Webseite
http://www.hlt.uni-duisburg-essen.de/

Funktionen

  • Universitätsprofessor/in em./i.R., Bauelemente der Höchstfrequenz-Elektronik

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Liborius, Lisa; Bieniek, Jan; Poßberg, Alexander; Tegude, Franz-Josef; Prost, Werner; Poloczek, Artur; Weimann, Nils
    Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 258 (2021) Nr. 2, S. 2000395
    Online Volltext: dx.doi.org/ (Open Access)
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    In: CrystEngComm Jg. 22 (2020) Nr. 33, S. 5522 - 5532
    Online Volltext: dx.doi.org/
  • Blumberg, Christian; Liborius, Lisa; Ackermann, Julia; Tegude, Franz-Josef; Poloczek, Artur; Prost, Werner; Weimann, Nils
    Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
    In: CrystEngComm Jg. 22 (2020) Nr. 7, S. 1239 - 1250
    Online Volltext: dx.doi.org/
  • Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils
    n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 257 (2020) Nr. 2, S. 1900358
    Online Volltext: dx.doi.org/ (Open Access)
  • Blumberg, Christian; Wefers, Fabian; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    In: CrystEngComm Jg. 21 (2019) Nr. 48, S. 7476 - 7488
    Online Volltext: dx.doi.org/
  • Speich, Claudia; Dissinger, Frank; Liborius, Lisa; Hagemann, Ulrich; Waldvogel, Siegfried R.; Tegude, Franz-Josef; Prost, Werner
    Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based Nanowires
    In: Physica Status Solidi (B): Basic Solid State Physics (2019) S. 1800678
    Online Volltext: dx.doi.org/
  • Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur
    Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
    In: Physica Status Solidi (A) - Applications and Materials Science Jg. 216 (2019) Nr. 1, S. 1800562
    Online Volltext: dx.doi.org/
  • Schmitt, Sebastian W.; Sarau, George; Speich, Claudia; Döhler, Gottfried H.; Liu, Ziheng; Hao, Xiaojing; Rechberger, Stefanie; Dieker, Christel; Spiecker, Erdmann; Prost, Werner; Tegude, Franz-Josef; Conibeer, Gavin; Green, Martin A.; Christiansen, Silke H.
    Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic Materials
    In: Advanced Optical Materials Jg. 6 (2018) Nr. 8, 1701329
    Online Volltext: dx.doi.org/
  • Blumberg, Christian; Grosse, Simon; Weimann, Nils; Tegude, Franz-Josef; Prost, Werner
    Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 255 (2018) Nr. 5, S. 1700485
    Online Volltext: dx.doi.org/
  • Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Benson, Niels; Schmechel, Roland
    Modelling of electron beam induced nanowire attraction
    In: Journal of Applied Physics Jg. 119 (2016) Nr. 14, S. 145101
    Online Volltext: dx.doi.org/
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL) Jg. 107 (2015) Nr. 8, S. 082103
    Online Volltext: dx.doi.org/
  • Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
    In: Nano Letters Jg. 15 (2015) Nr. 4, S. 2318 - 2323
    Online Volltext: dx.doi.org/
  • Benson, Niels; Tegude, Franz-Josef
    Nano und Energie ≠ NanoEnergie : Anwendungen von Nanokonzepten in der Photovoltaik
    In: Unikate: Berichte aus Forschung und Lehre (2013) Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, S. 76 - 87
    Online Volltext: dx.doi.org/ Online Volltext (Open Access)
  • Ochedowski, Oliver; Marinov, Kolyo; Wilbs, G.; Keller, Gregor; Scheuschner, Nils; Severin, Daniel; Bender, Markus; Maultzsch, Janina; Tegude, Franz-Josef; Schleberger, Marika
    Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation
    In: Journal of Applied Physics Jg. 113 (2013) Nr. 21, S. 214306
    Online Volltext: dx.doi.org/ (Open Access)
  • Sager, Daniel; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areas
    In: Journal of Applied Physics Jg. 113 (2013) Nr. 17, S. 174303-1 - 174303-5
    Online Volltext: dx.doi.org/
  • Sladek, Kamil; Winden, Andreas; Wirths, Stephan; Weis, Karl; Blömers, Christian; Gül, Önder; Grap, Thomas; Lenk, Steffi; von der Ahe, Martina; Weirich, Thomas E.; Hardtdegen, Hilde; Lepsa, Mihail Ion; Lysov, Andrey; Li, Zi-An; Prost, Werner; Tegude, Franz-Josef; Lüth, Hans; Schäpers, Thomas; Grützmacher, Detlev
    Comparison of InAs nanowire conductivity : Influence of growth method and structure
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 9 (2012) Nr. 2, S. 230 - 234
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef
    Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions
    In: Nano Letters Jg. 12 (2012) Nr. 3, S. 1453 - 1458
    Online Volltext: dx.doi.org/
  • Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke
    Far-field imaging for direct visualization of light interferences in GaAs nanowires
    In: Nano Letters Jg. 12 (2012) Nr. 10, S. 5412 - 5417
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Lysov, Andrey; Braam, Daniel; Regolin, Ingo; Keller, Gregor; Li, Zi-An; Geller, Martin Paul; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion
    In: Advanced Functional Materials Jg. 22 (2012) Nr. 5, S. 929 - 936
    Online Volltext: dx.doi.org/
  • Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Scalable electrical properties of axial GaAs nanowire pn-diodes
    In: Journal of Electronic Materials (JEM) Jg. 41 (2012) Nr. 5, S. 809 - 812
    Online Volltext: dx.doi.org/
  • Brönstrup, Gerald; Leiterer, Christian; Jahr, Norbert; Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Fritzsche, Wolfgang; Christiansen, Silke H.
    A precise optical determination of nanoscale diameters of semiconductor nanowires
    In: Nanotechnology Jg. 22 (2011) Nr. 38, S. 385201
    Online Volltext: dx.doi.org/
  • Regolin, Ingo; Gutsche, Christoph; Lysov, Andrey; Blekker, Kai; Li, Zi-An; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowires
    In: Journal of Crystal Growth Jg. 315 (2011) Nr. 1, S. 143 - 147
    Online Volltext: dx.doi.org/
  • Ahl, Jan Philipp; Behmenburg, Hannes; Giesen, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Radnoczi, György Zoltán; Pécz, Béla; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
    Gold catalyst initiated growth of GaN nanowires by MOCVD
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 8 (2011) Nr. 7-8, S. 2315 - 2317
    Online Volltext: dx.doi.org/
  • Topaloglu, Serkan; Prost, Werner; Tegude, Franz-Josef
    ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistry
    In: Microelectronic Engineering Jg. 88 (2011) Nr. 7, S. 1601 - 1605
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Brodt, A.; Liborius, Lisa; Frohleiks, Julia; Prost, Werner; Tegude, Franz-Josef
    Ohmic contacts to n-GaAs nanowires
    In: Journal of Applied Physics Jg. 110 (2011) Nr. 1, S. 014305
    Online Volltext: dx.doi.org/
  • Lysov, Andrey; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Topaloglu, Serkan; Geller, Martin Paul; Prost, Werner; Tegude, Franz-Josef
    Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
    In: Nanotechnology Jg. 22 (2011) Nr. 8, S. 085702
    Online Volltext: dx.doi.org/
  • Li, Zi-An; Möller, Christina; Migunov, Vadim; Spasova, Marina; Farle, Michael; Lysov, Andrey; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Ercius, Peter
    Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires
    In: Journal of Applied Physics Jg. 109 (2011) Nr. 11, S. 114320
    Online Volltext: dx.doi.org/ (Open Access)
  • Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Mertin, Wolfgang; Geller, Martin Paul; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes
    In: Nano Research Jg. 4 (2011) Nr. 10, S. 987 - 995
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    n-Type doping of vapor–liquid–solid grown GaAs nanowires
    In: Nanoscale Research Letters Jg. 6 (2011) Nr. 1, S. 65
    Online Volltext: dx.doi.org/ (Open Access)
  • Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
    In: IEEE Transactions on Nanotechnology Jg. 9 (2010) Nr. 4, S. 432 - 437
    Online Volltext: dx.doi.org/
  • Prost, Werner; Zhang, Dudu; Münstermann, Benjamin; Feldengut, Tobias; Geitmann, Ralf; Poloczek, Artur; Tegude, Franz-Josef
    InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
    In: EICE Transactions C: IEICE Transactions on Electronics Jg. E93-C (2010) Nr. 8, S. 1309 - 1314
    Online Volltext: dx.doi.org/
  • Borschel, Christian; Niepelt, Raphael; Geburt, Sebastian; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Stichtenoth, Daniel; Schwen, Daniel; Ronning, Carsten
    Alignment of semiconductor nanowires using ion beams
    In: Small Jg. 5 (2009) Nr. 22, S. 2576 - 2580
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Regolin, Ingo; Blekker, Kai; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growth
    In: Journal of Applied Physics Jg. 105 (2009) Nr. 2, S. 024305
    Online Volltext: dx.doi.org/
  • Vinaji, Sasa; Lochthofen, André; Mertin, Wolfgang; Regolin, Ingo; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
    In: Nanotechnology Jg. 20 (2009) Nr. 38, S. 385702
    Online Volltext: dx.doi.org/
  • Stichtenoth, Daniel; Wegener, Katharina; Gutsche, Christoph; Regolin, Ingo; Tegude, Franz-Josef; Prost, Werner; Seibt, Michael; Ronning, Carsten
    P -type doping of GaAs nanowires
    In: Applied Physics Letters (APL) Jg. 92 (2008) Nr. 16, S. 163107
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Liu, Xinyu; Prost, Werner; Tegude, Franz-Josef
    Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
    In: Solid State Electronics Jg. 52 (2008) Nr. 7, S. 1088 - 1091
    Online Volltext: dx.doi.org/
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter; Hitzbleck, Klemens; Wiggers, Hartmut
    GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles
    In: Journal of Applied Physics Jg. 101 (2007) Nr. 5, S. 054318
    Online Volltext: dx.doi.org/
  • Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, Stephan; Khorenko, Victor; Prost, Werner; Kästner, Jochen; Dumpich, Guenter; Meier, Cedrik; Lorke, Axel; Tegude, Franz-Josef
    Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs
    In: Journal of Crystal Growth Jg. 298 (2007) S. 607 - 611
    Online Volltext: dx.doi.org/
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Neumann, Stefan; Poloczek, Artur; Matiss, Andreas; Bakin, Andrey; Schlachetzki, Andreas; Tegude, Franz-Josef
    High performance III/V RTD and PIN diode on a silicon (001) substrate
    In: Applied Physics A: Materials Science and Processing Jg. 87 (2007) Nr. 3, S. 539 - 544
    Online Volltext: dx.doi.org/
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    High transconductance MISFET with a single InAs nanowire channel
    In: IEEE Electron Device Letters Jg. 28 (2007) Nr. 8, S. 682 - 684
    Online Volltext: dx.doi.org/
  • Alkeev, Nikolay V.; Averin, Stanislav V.; Dorofeev, Aleksey A.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
    In: Semiconductors Jg. 41 (2007) Nr. 2, S. 227 - 231
    Online Volltext: dx.doi.org/
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsP
    In: Physica E: Low-Dimensional Systems and Nanostructures Jg. 32 (2006) Nr. 1-2, S. 554 - 557
    Online Volltext: dx.doi.org/
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter
    Composition Control in MOVPE-Grown InGaAs Nanowhiskers.
    In: Journal of Applied Physics Jg. 298 (2006) S. 607 - 611
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Guenter
    Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers
    In: Journal of Applied Physics Jg. 100 (2006) Nr. 7, S. 074321
    Online Volltext: dx.doi.org/
  • Kollonitsch, Z.; Schimper, Hermann Josef; Seidel, Ulf; Möller, Kristof; Neumann, Stefan; Tegude, Franz-Josef; Willig, Frank; Hannappel, Thomas
    Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode
    In: Journal of Crystal Growth Jg. 287 (2006) Nr. 2, S. 536 - 540
    Online Volltext: dx.doi.org/
  • Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectors
    In: Electronics Letters Jg. 42 (2006) Nr. 10, S. 599 - 600
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Uchida, Kazuo; Nozaki, Shinji; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP-based HBTs
    In: Applied Surface Science Jg. 252 (2006) Nr. 21, S. 7664 - 7670
    Online Volltext: dx.doi.org/
  • Sudfeld, Daniela; Regolin, Ingo; Kästner, Jochen; Dumpich, Guenter; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Single InGaAs nanowhiskers characterized by analytical transmission electron microscopy
    In: Phase Transitions Jg. 79 (2006) Nr. 9-10, S. 727 - 737
    Online Volltext: dx.doi.org/
  • Topaloǧlu, Serkan; Driesen, Jörn; Prost, Werner; Tegude, Franz-Josef;
    The effect of collector doping on InP-based double heterojunction bipolar transistors
    4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,
    In: Turkish Journal of Electrical Engineering & Computer Sciences Jg. 14 (2006) Nr. 3, S. 429 - 436
    (Open Access)
  • Müller, Thorsten; Lorke, Axel; Do, Quoc Thai; Tegude, Franz-Josef; Schuh, Dieter; Wegscheider, Werner
    A three-terminal planar selfgating device for nanoelectronic applications
    In: Solid State Electronics Jg. 49 (2005) Nr. 12, S. 1990 - 1995
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓ
    In: Solid State Electronics Jg. 49 (2005) Nr. 3, S. 409 - 412
    Online Volltext: dx.doi.org/
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsP
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 202 (2005) Nr. 6, S. 992 - 996
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓ
    In: Journal of Applied Physics Jg. 96 (2004) Nr. 1, S. 777 - 783
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Otten, Frank; Reimann, Thorsten; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base
    In: Solid State Electronics Jg. 48 (2004) Nr. 9, S. 1637 - 1641
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures
    In: Applied Physics Letters (APL) Jg. 84 (2004) Nr. 15, S. 2910 - 2912
    Online Volltext: dx.doi.org/
  • Prost, Werner; Tegude, Franz-Josef
    Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-Prozessen
    In: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen (2004) Nr. 2003/2004, S. 88 - 92
    Online Volltext
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica status solidi A - Applied research Jg. 201 (2004) Nr. 5, S. 1017 - 1021
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 201 (2004) Nr. 5, S. 1017 - 1021
    Online Volltext: dx.doi.org/
  • Alkeev, Nikolay V.; Lyubchenko, Vladimir E.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric waves
    In: Journal of Communications Technology and Electronics Jg. 49 (2004) Nr. 7, S. 833 - 838
  • Neumann, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Growth and characterization of InAlP/InGaAs double barrier RTDs
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    In: Journal of Crystal Growth Jg. 272 (2004) Nr. 1-4, S. 555 - 558
    Online Volltext: dx.doi.org/
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.
    Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
    In: Journal of Applied Physics Jg. 96 (2004) Nr. 7, S. 3848 - 3851
    Online Volltext: dx.doi.org/
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Wiggers, Hartmut
    Photoluminescence of GaAs nanowhiskers grown on Si substrate
    In: Applied Physics Letters (APL) Jg. 85 (2004) Nr. 26, S. 6407 - 6408
    Online Volltext: dx.doi.org/
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors
    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures Jg. 22 (2004) Nr. 3, S. 1060 - 1066
    Online Volltext: dx.doi.org/ (Open Access)
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Surface recombination mechanism in graded-base InGaAs-InP HBTs
    In: IEEE Transactions on Electron Devices (T-ED) Jg. 51 (2004) Nr. 6, S. 1044 - 1045
    Online Volltext: dx.doi.org/
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Circuit and application aspects of tunnelling devices in a MOBILE configuration
    In: International Journal of Circuit Theory and Applications Jg. 31 (2003) Nr. 1, S. 83 - 103
    Online Volltext: dx.doi.org/
  • Neumann, Stefan; Bakin, Andrey; Velling, Peter; Prost, Werner; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef;
    Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth Jg. 248 (2003) S. 380 - 383
    Online Volltext: dx.doi.org/
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
    In: Journal of Crystal Growth Jg. 248 (2003) S. 130 - 133
    Online Volltext: dx.doi.org/
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef;
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth Jg. 248 (2003) S. 158 - 162
    Online Volltext: dx.doi.org/
  • Schlothmann, Bernd Josef; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
    6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,
    In: Physica Status Solidi (C): Current Topics in Solid State Physics (2003) Nr. 3, S. 922 - 927
    Online Volltext: dx.doi.org/
  • Saǧlam, M.; Schumann, Bert; Müllerwiebus, Viki; Megej, Alexander; Auer, Uwe; Rodriguez-Gironés, Manuel; Judaschke, Rolf H.; Tegude, Franz-Josef; Hartnagel, Hans Ludwig
    450 GHz millimetre-wave signal from frequency tripler with heterostructure barrier varactors on gold substrate
    In: Electronics Letters Jg. 38 (2002) Nr. 13, S. 657 - 658
    Online Volltext: dx.doi.org/
  • Otten, Frank; Auer, Uwe; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals Impress
    In: Material Science and Technology Jg. 18 (2002) Nr. 7, S. 717 - 720
    Online Volltext: dx.doi.org/
  • Auer, Uwe; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Duschl, R.; Eberl, Karl
    Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
    In: IEEE Electron Device Letters Jg. 22 (2001) Nr. 5, S. 215 - 217
    Online Volltext: dx.doi.org/
  • Mihaila, Mihai N.; Scheffer, Frank; Heedt, Christian; Tegude, Franz-Josef;
    Nonlinear Effects in the 1/f Noise of a 2D Electron Gas
    9th IFAC Symposium on Large Scale Systems: Theory and Applications 2001, Bucharest, Romania, 18-20 July 2001,
    In: IFAC Proceedings Volumes Jg. 34 (2001) Nr. 8, S. 319 - 324
    Online Volltext: dx.doi.org/
  • Mihaila, M.; Heedt, C.; Tegude, Franz-Josef
    On the Microscopic Origin of 1/f Noise in Lattice-Matched InAlAs/InGaAs HEMT's
    In: Proceedings of the Romanian Academy Series A: Mathematics Physics Technical Sciences Information Science (2001)
  • Spieler, Jochen; Kippenberg, Thomas; Krauß, J.; Kiesel, Peter; Döhler, Gottfried H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Electro-optical examination of the band structure of ordered InGaAs
    In: Applied Physics Letters (APL) Jg. 76 (2000) Nr. 1, S. 88 - 90
    Online Volltext: dx.doi.org/
  • Berntgen, Jürgen; Behres, Alexander; Kluth, Jürgen; Heime, Klaus; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef;
    Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
    15th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations, Hongkong, 23.08.1999 - 26.08.1999,
    In: Microelectronics Reliability Jg. 40 (2000) Nr. 11, S. 1911 - 1914
    Online Volltext: dx.doi.org/
  • Velling, Peter; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
    In: Journal of Crystal Growth Jg. 221 (2000) Nr. 1-4, S. 722 - 729
    Online Volltext: dx.doi.org/
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Janßen, Guido; van der Roer, T.
    Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes
    In: International Journal of Circuit Theory and Applications Jg. 28 (2000) Nr. 6, S. 537 - 552
    Online Volltext: dx.doi.org/
  • Keiper, Dietmar; Velling, Peter; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Landgren, Gunnar
    Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambient
    In: Japanese Journal of Applied Physics Jg. 39 (2000) Nr. 11, S. 6162 - 6165
    Online Volltext: dx.doi.org/
  • Pacha, Christian; Kessler, Oliver; Glösekötter, Peter; Goser, Karl F.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef
    Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic
    In: Analog Integrated Circuits and Signal Processing Jg. 24 (2000) Nr. 1, S. 7 - 25
    Online Volltext: dx.doi.org/
  • Pacha, Christian; Auer, Uwe; Burwick, Christian; Glösekötter, Peter; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef; Goser, Karl F.;
    Threshold logic circuit design of parallel adders using resonant tunneling devices
    11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,
    In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems Jg. 8 (2000) Nr. 5, S. 558 - 572
    Online Volltext: dx.doi.org/
  • Hilburger, Ulrich; Fix, Walter; Mayer, R.; Geißelbrecht, Wolfgang; Malzer, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Döhler, Gottfried H.
    Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
    In: Journal of Crystal Growth Jg. 201-202 (1999) S. 574 - 577
    Online Volltext: dx.doi.org/
  • Kopperschmidt, P.; Senz, S T.; Scholz, R.; Kästner, G.; Gösele, U.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Gottschalch, V.; Wada, K.
    Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
    In: MRS (Materials Research Society) Proceedings Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics (1999) S. 45
    Online Volltext: dx.doi.org/
  • Berntgen, Jürgen; Heime, Klaus; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef; Matulionis, Arvydas
    The 1/f noise of InP based 2DEG devices and its dependence on mobility
    In: IEEE Transactions on Electron Devices (T-ED) Jg. 46 (1999) Nr. 1, S. 194 - 203
    Online Volltext: dx.doi.org/
  • Auer, Uwe; Kim, Samuel O.; Agethen, Michael; Veiling, P.; Prost, Werner; Tegude, Franz-Josef
    Fast fabrication of InP-based HBT using a novel coplanar design
    In: Electronics Letters Jg. 34 (1998) Nr. 19, S. 1885 - 1886
    Online Volltext: dx.doi.org/ (Open Access)
  • Haase, M.; Prost, Werner; Veiling, P.; Liu, Q.; Tegude, Franz-Josef
    HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures
    In: Thin Solid Films Jg. 319 (1998) Nr. 1-2, S. 25 - 28
    Online Volltext: dx.doi.org/
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport
    In: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 117 - 123
    Online Volltext: dx.doi.org/
  • Velling, Peter; Fix, Walter; Geißelbrecht, Wolfgang; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
    In: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 490 - 494
    Online Volltext: dx.doi.org/
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Nielsch, Kornelius; Rellinghaus, Bernd; Auer, Uwe; Peled, Aaron Z.; Wassermann, Eberhard; Fissan, Heinz; Tegude, Franz-Josef
    Monodisperse aerosol particle deposition : Prospects for nanoelectronics
    In: Microelectronic Engineering Jg. 41-42 (1998) S. 535 - 538
    Online Volltext: dx.doi.org/
  • Veiling, P.; Janßen, Guido; Auer, Uwe; Prost, Werner; Tegude, Franz-Josef
    NAND/NOR logic circuit using single InP-based RTBT
    In: Electronics Letters Jg. 34 (1998) Nr. 25, S. 2390 - 2392
    Online Volltext: dx.doi.org/
  • van Waasen, Stefan; Umbach, Andreas; Auer, Uwe; Bach, Heinz-Gunter; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Reuter, Ralf; Schlaak, Wolfgang; Schramm, Carsten; Unterbörsch, Günter; Wolfram, Peter; Tegude, Franz-Josef
    27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier
    In: IEEE Journal of Solid-State Circuits Jg. 32 (1997) Nr. 9, S. 1394 - 1399
    Online Volltext: dx.doi.org/
  • Lakner, Hubert; Mendorf, C.; Bollig, Bernd; Prost, Werner; Tegude, Franz-Josef;
    Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B Jg. 44 (1997) Nr. 1-3, S. 52 - 56
    Online Volltext: dx.doi.org/
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef;
    Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 44 (1997) Nr. 1-3, S. 91 - 95
    Online Volltext: dx.doi.org/
  • Liu, Q.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef;
    Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
    3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), 22.04.1996 - 24.04.1996, Parma, Italy,
    In: Il Nuovo Cimento della Società Italiana di Fisica D Jg. 19 (1997) Nr. 2-4, S. 299 - 304
    Online Volltext: dx.doi.org/
  • Brennemann, Andreas; Prost, Werner; Liu, Q.; Auer, Uwe; Tegude, Franz-Josef;
    Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B Jg. 44 (1997) Nr. 1-3, S. 87 - 90
    Online Volltext: dx.doi.org/
  • Lindner, A.; Velling, Peter; Prost, Werner; Wiersch, A.; Kuphal, Eckart; Burchard, A.; Magerle, Robert; Deicher, Manfred; Tegude, Franz-Josef;
    The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
    8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,
    In: Journal of Crystal Growth Jg. 170 (1997) Nr. 1-4, S. 287 - 291
    Online Volltext: dx.doi.org/
  • Auer, Uwe; Prost, Werner; Janßen, Guido; Agethen, Michael; Reuter, Ralf; Tegude, Franz-Josef
    A novel 3-D integrated HFET/RTD frequency multiplier
    In: IEEE Journal of Selected Topics in Quantum Electronics (J-STQE) Jg. 2 (1996) Nr. 3, S. 650 - 653
    Online Volltext: dx.doi.org/
  • Liu, Q.; Brennemann, Andreas; Hardtdegen, H.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef
    Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffraction
    In: Journal of Applied Physics Jg. 79 (1996) Nr. 2, S. 710 - 716
    Online Volltext: dx.doi.org/
  • Liu, Q.; Derksen, S.; Prost, Werner; Lindner, A.; Tegude, Franz-Josef
    Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfaces
    In: Journal of Applied Physics Jg. 79 (1996) Nr. 1, S. 305 - 309
    Online Volltext: dx.doi.org/
  • Daumann, Walter; Ellrodt, P.; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Molls, Wolfgang; Tegude, Franz-Josef
    InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices
    In: IEEE Electron Device Letters Jg. 17 (1996) Nr. 10, S. 488 - 490
    Online Volltext: dx.doi.org/
  • Umbach, Andreas; van Waasen, Stefan; Auer, Uwe; Bach, Heintz Gunter; Bertenburg, Ralf M.; Breuer, V.; Ebert, Wilhelm; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Schlaak, Wolfgang; Schramm, Carsten; Seeger, Angela; Tegude, Franz-Josef; Unterbörsch, Günter
    Monolithic pin-HEMT 1.55μm photoreceiver on InP with 27GHz bandwidth
    In: Electronics Letters Jg. 32 (1996) Nr. 23, S. 2142 - 2143
    Online Volltext: dx.doi.org/
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
    In: Microwave and Optical Technology Letters Jg. 11 (1996) Nr. 3, S. 125 - 128
    Online Volltext: dx.doi.org/
  • Reuter, Ralf; van Waasen, Stefan; Tegude, Franz-Josef
    A New Noise Model of HFET with Special Emphasis on Gate-Leakage
    In: IEEE Electron Device Letters Jg. 16 (1995) Nr. 2, S. 74 - 76
    Online Volltext: dx.doi.org/
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangement
    In: Applied Physics Letters (APL) Jg. 67 (1995) S. 2807
    Online Volltext: dx.doi.org/
  • David, Gerhard; Bussek, Peter; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Electro-optic probing of RF signals in submicrometre MMIC devices
    In: Electronics Letters Jg. 31 (1995) Nr. 25, S. 2188 - 2189
    Online Volltext: dx.doi.org/
  • Liu, Q.; Derksen, S.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerface
    In: Journal of Applied Physics Jg. 77 (1995) Nr. 3, S. 1154 - 1158
    Online Volltext: dx.doi.org/
  • Auer, Uwe; Reuter, Ralf; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef;
    InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
    8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,
    In: Journal of Crystal Growth Jg. 150 (1995) S. 1225 - 1229
    Online Volltext: dx.doi.org/
  • Ellrodt, P; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
    In: Solid State Electronics Jg. 38 (1995) Nr. 10, S. 1775 - 1780
    Online Volltext: dx.doi.org/
  • Prost, Werner; Scheffer, F.; Liu, Q.; Lindner, A.; Lakner, Hubert; Gyuro, I.; Tegude, Franz-Josef
    Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
    In: Journal of Crystal Growth Jg. 146 (1995) Nr. 1-4, S. 538 - 543
    Online Volltext: dx.doi.org/
  • Wiersch, A.; Heedt, Christian H.; Schneiders, S.; Tilders, R.; Buchali, F.; Kuebart, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique
    In: Journal of Non-Crystalline Solids Jg. 187 (1995) S. 334 - 339
    Online Volltext: dx.doi.org/
  • Fritzsche, Dieter; Nickel, Heinrich; Lösch, Rainer; Schlapp, Winfried; Tegude, Franz-Josef
    Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier Layer
    In: IEEE Transactions on Electron Devices (T-ED) Jg. 41 (1994) Nr. 10, S. 1685 - 1690
    Online Volltext: dx.doi.org/
  • Scheffer, F.; Heedt, Christian H.; Reuter, Ralf; Lindner, A.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layer
    In: Electronics Letters Jg. 30 (1994) Nr. 2, S. 169 - 170
    Online Volltext: dx.doi.org/
  • Scheffer, F.; Lindner, A.; Liu, Q.; Heedt, Christian H.; Reuter, Ralf; Prost, Werner; Lakner, Hubert; Tegude, Franz-Josef
    Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor application
    In: Journal of Crystal Growth Jg. 145 (1994) Nr. 1-4, S. 326 - 331
    Online Volltext: dx.doi.org/
  • Lindner, A.; Liu, Q.; Scheffer, F.; Haase, M.; Prost, Werner; Tegude, Franz-Josef;
    Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
    7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,
    In: Journal of Crystal Growth Jg. 145 (1994) Nr. 1-4, S. 771 - 777
    Online Volltext: dx.doi.org/
  • Liu, Q.; Scheffer, F.; Lindner, A.; Lakner, Hubert; Prost, Werner; Tegude, Franz-Josef;
    X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
    Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 28 (1994) Nr. 1-3, S. 188 - 192
    Online Volltext: dx.doi.org/
  • Liu, Q.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy
    In: Journal of Applied Physics Jg. 75 (1994) Nr. 5, S. 2426 - 2433
    Online Volltext: dx.doi.org/ (Open Access)
  • Liu, Q.; Quedeweit, U.; Scheffer, F.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef;
    Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
    European Materials Research Conference (E-MRS), Strasbourg, France, 04.05.1993 - 07.05.1993,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 21 (1993) Nr. 2-3, S. 181 - 184
    Online Volltext: dx.doi.org/
  • Porges, M.; Lalinsky, Tibor; Safrankova, Jaroslava; Hudek, Peter; Kraus, Jörg; Tegude, Franz-Josef; von Wendorff, W.C.; Jäger, Dieter
    GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFET
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 136 (1993) Nr. 1, S. K65 - K69
    Online Volltext: dx.doi.org/
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFET
    In: Journal of Crystal Growth Jg. 127 (1993) Nr. 1-4, S. 589 - 591
    Online Volltext: dx.doi.org/
  • Safrankova, Jaroslava; Porges, M.; Lalinsky, Tibor; Mozolova, Želmíra; Hudek, Peter; Kostic, Ivan; Kraus, Jörg; von Wendorff, W.C.; Tegude, Franz-Josef; Jäger, Dieter
    Photoelectrical properties of GaAs MSM photodetektor compatible with pseudomorphic heterostructure MESFET
    In: Physica status solidi A: Applications and Materials Science Jg. 140 (1993) Nr. 2, S. K111 - K114
    Online Volltext: dx.doi.org/
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 401 - 404
    Online Volltext: dx.doi.org/
  • Dragoman, Mircea L.; Block, M.; Kremer, Ralf; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar microwave phase shifter for InP-based MMICs
    In: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 421 - 424
    Online Volltext: dx.doi.org/
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a quasi 2D-model
    In: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 39 - 42
    Online Volltext: dx.doi.org/
  • Bode, Michael; Schubert, Jurgen; Zander, Willi; Kraus, Jörg; Peters, Dirk; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 K
    In: IEEE Transactions on Microwave Theory and Techniques Jg. 40 (1992) Nr. 12, S. 2325 - 2331
    Online Volltext: dx.doi.org/
  • Joseph, M.; Guimaraes, Francisco Eduardo Gontijo; Kraus, J.; Tegude, Franz-Josef
    Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurements
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Jg. 9 (1991) Nr. 3, S. 1456
    Online Volltext: dx.doi.org/
  • Scheffer, F.; Joseph, M.; Prost, Werner; Tegude, Franz-Josef; Lackner, H.; Zumkley, S.; Wingen, G.; Jäger, Dieter
    Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devices
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 9 (1991) Nr. 1-3, S. 361 - 364
    Online Volltext: dx.doi.org/
  • Baston, J.; Tegude, Franz-Josef; Heime, Klaus
    Traps at interfaces between GaAs n-type LPE layers and different substrates
    In: Surface Science Jg. 132 (1983) Nr. 1-3, S. 465 - 468
    Online Volltext: dx.doi.org/
  • Tegude, Franz-Josef; Heime, Klaus
    Photo-f.e.t. Method : High-Resolution deep-level measurement technique using a m.e.s.f.e.t. structure
    In: Electronics Letters Jg. 16 (1980) Nr. 1, S. 22 - 23
    Online Volltext: dx.doi.org/
  • Jäger, Dieter; Tegude, Franz-Josef
    Nonlinear wave propagation along periodic-loaded transmission lines
    In: Applied Physics Jg. 15 (1978) Nr. 4, S. 393 - 397
    Online Volltext: dx.doi.org/ Online Volltext

    • Aufsätze

  • Arzi, Khaled; Keller, G.; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner;
    Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
    UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,
    Liverpool (2017)
    Online Volltext
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Erratum: Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL) Jg. 108 (2016) Nr. 4, S. 082103
    Online Volltext: dx.doi.org/

    • Beiträge in Sammelwerken und Tagungsbänden

  • Arzi, Khaled; Keller, Gregor; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection locking
    In: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017 2017, S. 8068485
    Online Volltext: dx.doi.org/
  • Benson, Niels; Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Schmechel, Roland (Hrsg.)
    Modeling of electron beam induced GaAs nanowire attraction
    In: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg 2017
    Online Volltext
  • Reuter, Ralf; van Waasen, Stefan; Peters, Dirk; Auer, Uwe; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources
    In: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 205 - 210
    Online Volltext: dx.doi.org/
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    In: Noise in Devices and Circuits II / Noise in Devices and Cirquits II, 26 - 28 May 2004, Maspalomas, Spain / Danneville, Francois; Bonani, Fabrizio; Deen, M. Jamal; Levinshtein, Michael E. (Hrsg.) 2004, S. 164 - 172
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    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 255 - 257
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    Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓ
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 156 - 159
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    A novel 1.55µm HBT-Electroabsorption modulator
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, S. 21 - 24
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    Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)
    In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, S. 365 - 370
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    Different approaches for integrating HBTs and EAMs
    In: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 2002 ; 18 - 19 November; Manchester, UK 2002, S. 149 - 154
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    Experimental threshold logic implementations based on resonant tunnelling diodes
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    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 127 - 130
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    Monolithically integrated optoelectronic circuits using HBT, EAM, and TEAT
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan 2002, S. 349 - 352
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    Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)
    In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Hrsg.) 2002, S. 211 - 214
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    Waveguide HBT electroabsorption modulators : Devices and circuits
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 123 - 126
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    Waverguide HBT electroabsorption modulators : devices and circuits
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    Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBT
    In: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 Jg. 1 2001, S. 1765 - 1768
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    InP-based monolithically integrated RTD/HBT MOBILE for logic circuits
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 - 235
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    Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μm
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    Resonant Tunneling Device Logic : A Circuit Designer's Perspective
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    Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobile
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    In: 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / GaAs IC 1992; Miami Beach, United States; 4 - 7 October 1997 1992, S. 119 - 122
    Online Volltext: dx.doi.org/
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 401 - 404
  • Dragoman, M.; Block, M.; Kremer, R.; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar InAlAs/InGaAs/InP microwave delay line with optical control
    In: Proceedings of IEEE Lasers and Electro-Optics Society: Annual Meeting 1992 / LEOS '92: 16-19 Nov. 1992, Boston, MA, USA 1992, S. 684 - 685
    Online Volltext: dx.doi.org/
  • Dragoman, Mircea L.; Block, M.; Kremer, Ralf; Buchali, Fred; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar microwave phase shifter for InP-based MMICs
    In: Proceedings of the 22nd European Solid-State Device Research Conference / ESSDERC 1992; Leuven; Belgium; 14 - 17 September 1992 1992, Nr. 4, S. 421 - 424
    Online Volltext
  • Buchali, F.; Scheffer, F.; Heedt, Christian H.; Gyuro, Imre; Speier, Peter; Prost, Werner; Tegude, Franz-Josef
    Evidence of oxygen in undoped InAIAs MOVPE layers
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 534 - 537
    Online Volltext: dx.doi.org/
  • Heedt, C.; Buchali, F.; Prost, Werner; Fritzsche, D.; Nickel, H.; Tegude, Franz-Josef
    Extremly low gate leakage InAlAs/InGaAs HEMT
    In: Proceedings of the 19th International Symposium on GaAs and Related Compounds / GaAs RC`92; Karuizawa, Japan; 28.09.1992 - 02.10.1992 1992, S. 941 - 942
  • Buchali, F.; Gyuro, I.; Scheffer, F.; Prost, Werner; Block, M.; von Wendorff, W.C.; Heymann, G.; Tegude, Franz-Josef; Speier, P.; Jäger, Dieter
    Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPE
    In: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States 1992, S. 596 - 599
    Online Volltext: dx.doi.org/
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a Quasi 2D-model
    In: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 39 - 42
  • Heedt, Christian H.; Gottwald, Péter; Buchali, F.; Prost, Werner; Künzel, Harald M.; Tegude, Franz-Josef
    On the optimization and reliability of ohmic-And Schottky contacts to InAlAs/InGaAs HFET
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 238 - 241
    Online Volltext: dx.doi.org/
  • Meschede, H.; Reuter, R.; Peters, D.; Kraus, J.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-Wafer RF Measurement Setup for the Characterization of HEMT's and High TC Superconductors at Very Low Temperatures Down to 20K
    In: Proceedings of IEEE International Microwave Symposium (MTT-S) / Albuquerque, USA; 01.06.1992 - 05.06.1992 1992, S. 1439 - 1442
  • Meschede, H.; Albers, J.; Reuter, R.; Kraus, J.; Peters, D.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF Investigations on HEMT's at Cryogenic Temperatures Down to 20K using an On-Wafer Microwave Measurement Setup
    In: Proceedings of the 22nd European Microwave Conference / EuMC`92; Helsinki, Finland; 24.08.1992 - 27.08.1992 1992, S. 151 - 156
  • Joseph, M.; Guimaraes, Francisco Eduardo Gontijo; Kraus, J.; Tegude, Franz-Josef
    Low Damage High Selective Dry Etch Process for the Fabrication of GaAs MESFET and AlxGa1-xAs/GaAs HFET
    In: Proceedings of the 14th State-of-the-Art Program of Compound Semiconductors / SOTAPOCS´91; Bellcore, USA; 03.05.1991 / Buckley, D.N.; Macrander, A.T. (Hrsg.) 1991, S. 91 - 99
  • Heedt, Christian H.; Gottwald, Péter; Prost, Werner; Tegude, Franz-Josef; Künzel, Harald M.; Dickmann, Jürgen; Dämbkes, Heinrich
    Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer
    In: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991 1991, S. 284 - 287
    Online Volltext: dx.doi.org/
  • Tegude, Franz-Josef; Heime, Klaus
    Investigation of Deep Levels at Interfaces by Means of FET-Structures and Optical Excitation
    In: Proceedings of the 11th International Symposium on GaAs and Related Compounds / GaAs RC´84; Biarritz, France; 26.09. - 28.09.1984 1984, S. 305 - 310
  • Tegude, Franz-Josef; Baston, J.; Arnold, Norbert; Heime, Klaus
    Deep Level Profiles of GaAs Active Layers and their Correlation to Substrate Properties
    In: Semi-insulating III-V materials: Evian 1982 / Conference on Semi-Insulating III-V Materials 2; 1982.04.19-21; Evian, France 1982, S. 291 - 297
  • Tegude, Franz-Josef; Heime, Klaus
    Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method
    In: Semi-Insulating III–V Materials: Nottingham 1980 / Rees, G. J. (Hrsg.) 1980, S. 321 - 328
    Online Volltext: dx.doi.org/

    • Lexikoneinträge

  • Agethen, Michael; Reuter, R.; Breder, T.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    High Frequency Noise
    In: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Hrsg.) Jg. 14 1999, S. 392 - 410

    • Vorträge

  • Tegude, Franz-Josef;
    III-V-Nanowire FET
    Symposium on Opto- and Microelectronic Devices and Circuits 2010 (SODC), Berlin, Germany, 04.10.2010 - 07.10.2010,
    Berlin, Germany (2010)
  • ; Regolin, Ingo; Gutsche, C.; Lysov, A.; Prost, Werner; Malek, Margarethe; Vinaji, S.; Mertin, Wolfgang; Bacher, Gerd; Offer, Matthias; Lorke, Axel; Tegude, Franz-Josef
    Axial doping profile in VLS grown GaAs:Zn nanowires
    13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,
    (2009)
  • Prost, Werner; Poloczek, A.; Matiss, A.; Driesen, J.; Tegude, Franz-Josef;
    High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
    XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,
    Sevilla, Spain (2007)
  • Prost, Werner; Khorenko, V.; Kelly, P.; Mofor, A.-C.; Neumann, S.; Poloczek, Artur; Brennenmann, A.; Matiss, A.; Bakin, A.; Stöhr, Andreas; Jäger, Dieter; Ginnity, M. Mc; Schlachetzki, A.; Tegude, Franz-Josef;
    High Performance III/V RTD and PIN Diodes on a silicon substrate
    6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,
    Awaji Island, Hyogo (2005)
  • Matiss, A.; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
    European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,
    Amsterdam, The Netherlands (2004)
  • Neumann, Stefan; Topaloglu, S.; Driesen, J.; Jin, Z.; Prost, Werner; Tegude, Franz-Josef;
    Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    Lahaina, USA (2004)
  • Khorenko, E.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef;
    Tunneling Diodes for Compact High Speed Circuits
    3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,
    Wuhan, China (2004)
  • Prost, Werner; Neumann, Stefan; Velling, Peter; Tegude, Franz-Josef;
    LP-MOVPE growth for high-speed electronic devices on InP
    10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,
    Leece, Italy (2003)
  • Schneider, M.; Reimann, Thorsten; Tegude, Franz-Josef; Jäger, Dieter
    Multifunctional 1.55µm transistor-electroabsorption-transceiver
    (2003)
    Online Volltext
  • Ehrich, Silja; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    RF- and Noise Modeling of Semiconductor Devices based on InP
    ITG Fachtagung 2003,
    (2003)
  • Ehrich, S.; Agethen, Michael; Velling, Peter; Brennemann, Andreas; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
    14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,
    Barcelona, Spain (2003)
  • Ehrich, S.; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A Consistent PSPICE-Model for InP HBT
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. (2002)
  • Otten, Frank; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz;
    Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
    7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,
    Malmö, Sweden (2002)
  • Schlothmann, B.; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. (2002)
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,
    Edingburgh, U.K. (2002)
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,
    Beijing, China (2002)
  • Ehrich, S.; Agethen, Michael; Bertenburg, Ralf M.; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
    9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,
    London, U.K. (2001)
  • Schüller, S.; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
    11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,
    Stuttgart, Germany (2001)
  • Agethen, Michael; Schüller, S.; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,
    Cagliari, Italy (2001)
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
    65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,
    Hamburg (2001)
    Online Volltext
  • Reimann, Thorsten; Schneider, Marc; Neumann, S.; van Husen, Holger; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Integration of Heterostructure Bipolartransistors with Electroabsorption Waveguide Modulators and Applications
    11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,
    Padua (2001)
    Online Volltext
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
    12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,
    Duisburg (2000)
    Online Volltext
  • Prost, Werner; Velling, Peter; Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Glösekötter, P.; Goser, K.F.; Tegude, Franz-Josef;
    Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,
    Aegean Sea, Greece (2000)
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef;
    All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
    8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,
    Prag, Czech Republic (1999)
  • Prost, Werner; Tegude, Franz-Josef;
    Winziger als die Mikro-Elektronik
    Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,
    Duisburg (1999)
  • Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef;
    Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
    3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,
    (1998)
  • Velling, Peter; Haase, M.; Agethen, Michael; Janßen, Guido; Prost, Werner; Tegude, Franz-Josef;
    3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
    7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,
    Berlin, Germany (1997)
  • Agethen, Michael; Breder, T.; Reuter, R.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
    International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,
    Kassel, Germany (1997)
  • Reuter, Ralf; Agethen, Michael; Breder, T.; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany (1997)
  • Braasch, T.; David, G.; Hülsewede, R.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter;
    Frequency and time domain characterization of nonlinear transmission lines using electro-optic probing techniques
    MIOP ´97, Sindelfingen,
    Sindelfingen (1997)
  • Prost, Werner; Haase, M.; Velling, Peter; Liu, Q.; Tegude, Franz-Josef;
    HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
    European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,
    Strasbourg, France (1997)
  • Alles, M.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter;
    Millimeterwave Photodetectors
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany (1997)
  • Agethen, Michael; Reuter, Ralf; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany (1997)
  • Daumann, W.; Reuter, R.; Agethen, Michael; Auer, Uwe; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Tegude, Franz-Josef;
    Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
    European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,
    Lille, France (1996)
  • Umbach, A.; van Waasen, Stefan; Bach, H.; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Unterbörsch, G.; Wolfram, P.; Tegude, Franz-Josef;
    High-Speed Photoreceiver by Monolithic Integration of a Waveguide Fed Photodiode and a GaInAs/AlInAs-HEMT Based Distributed Amplifer
    8th International Conference on InP and Related Materials (IPRM), Schwaebisch Gmuend, Germany, 21.04.1996 - 25.04.1996,
    Schwaebisch Gmuend, Germany (1996)
  • Prost, Werner; Auer, Uwe; Janßen, Guido; Reuter, Ralf; Agethen, Michael; Tegude, Franz-Josef;
    Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
    4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,
    Erlangen, Germany (1996)
  • Janßen, G.; Prost, Werner; Reuter, Ralf; Auer, Uwe; Schroeder, W.; Tegude, Franz-Josef;
    Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
    International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,
    Orvieto, Italy (1996)
  • Tegude, Franz-Josef; Lindner, A.; Prost, Werner; Wiersch, A.;
    On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
    20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,
    Vilnius, Litauen (1996)
  • Bertenburg, Ralf M.; Clement, A.; Tegude, Franz-Josef;
    40Gb/s optoelektronische Empfänger höchster Empfindlichkeit mit konzentrierten Photo-detektoren und Wanderwellenverstärkern : Designüberlegungen und Entwicklung
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany (1995)
  • Lindner, A.; Prost, Werner; Wiersch, A.; Liu, Q.; Scheffer, F.; Kuphal, E.; Tegude, Franz-Josef;
    Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',
    Gent, Belgium (1995)
  • Reuter, Ralf; van Waasen, Stefan; Peters, D.; Tegude, Franz-Josef;
    Ein Temperaturrauschmodell für HFET mit besonderer Berücksichtigung des Einflusses eines Gate-Leckstroms auf das Rauschverhalten
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany (1995)
  • Bertenburg, Ralf M.; Janßen, G.; Heedt, Christian H.; Grzona, P.; Reuter, Ralf; Fritzsche, D.; Tegude, Franz-Josef;
    Entwicklung eines optoelektronischen Empfängers nach dem Transimpedanzverstärker-prinzip für Bitraten von 500MB/s bis 2,5GB/s und hoher Empfindlichkeit
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany (1995)
  • Peters, D.; Daumann, W.; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, E.; Tegude, Franz-Josef;
    New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
    International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,
    Gaithersburg, USA (1995)
  • Ellrodt, P.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
    4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,
    Kruger Nat. Park, South Africa (1995)
  • Jäger, Dieter; Zumkley, S.; Wingen, G.; Auer, Uwe; Tegude, Franz-Josef;
    40 GHz Vertical Electrooptical Fabry-Perot Modulator with Schottky contacts
    CLEO/EUROPE `94, Amsterdam, Niederlande, 1994,
    (1994)
  • Redlich, S.; Kremer, R.; Neubauer, A.; Bollig, B.; Liu, Q.; Kubalek, Erich; Tegude, Franz-Josef; Laws, P.; Jäger, Dieter;
    InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
    9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,
    (1994)
  • Mihaila, M.; Heedt, Christian H.; Scheffer, F.; Tegude, Franz-Josef;
    Phonon-Induced 1/f Noise in InAlAs/InGaAs HEMTs
    17th International Semiconductor Conference (CAS), Sinaia, Romania, 11.10.1994 - 16.10.1994,
    Sinaia, Romania (1994)
  • Lindner, A.; Scheffer, F.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef;
    LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
    5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,
    Malmö, Sweden (1993)
  • Lakner, Hubert; Kubalek, Erich; Kraus, J.; Tegude, Franz-Josef;
    High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
    10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,
    Granada, Spain (1992)
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich;
    InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
    7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,
    Schwäbisch Gmünd, Germany (1992)