Integrated circuit manufacturing technology covers silicon based (CMOS) IC fabrication.
Starting from a definition of requirements to build an MOS device, all necessary processing step used in modern IC manufacturing are described. Silicon material, oxidation, diffusion, ion implantation, lithography, plasma etching, and others are presented, taking actual developments into account. Result is a complete CMOS process flow.
The two links between technology and circuit design, i.e. device parameters and design rules are discussed.
Yield models are covered next. Finally we present models to describe and improve the long term reliability of IC.

Complementary technologies include compound semiconductors, such as gallium nitride (GaN), which has revolutionized lighting technology. In addition to GaN, SiGe, InP and GaAs play an important role for high frequency applications, e.g. in mobile networks. The so-called III-V materials InP and GaAs form the basis for modern optical communication. The material technology for the production of compound semiconductors is set apart from the silicon technology because the compound  materials do not occur in nature. Besides material synthesis, special process steps for compound semiconductors, e.g. high-resolution electron beam lithography, are discussed.

Learning Targets:   

The students should know the individual process steps for the production of highly integrated (CMOS) circuits and the overall CMOS process flow,
Understand the relationship between technology and component parameters or design rules, as well as influences on the production yield and on the
Component reliability.
Processes for material synthesis of compound semiconductors as well as special processes are presented and explained in connection with applications.
Practical examples are worked through in the exercises.

Literature:    

• U. Hilleringmann: Silizium-Halbleitertechnologie, 4. Auflage, Teubner Studienbücher, 2004
• Peter Van Zant: Microchip Fabrication. A Practical Guide to Semiconductor Processing, 4th edition, McGraw-Hill Professional Publishing, 2000

Contact Person: Prof. Dr. Nils Weimann