The exams:

Festkörperelektronik
Elektronische Bauelemente
HF-FET und Bipolarelektronik

will be conducted as attendance exams …

The exams:

Festkörperelektronik
Elektronische Bauelemente
HF-FET und Bipolarelektronik

will be conducted as attendance exams in the current summer semester. Please inform yourself about the applicable legal regulations before the respective exam.

Currently, there are a few vacancies for student assistants in the field of metrology and technology. If you are interested please contact Dr.-Ing. …

Currently, there are a few vacancies for student assistants in the field of metrology and technology. If you are interested please contact Dr.-Ing. Wolfgang Brockerhoff.

We offer topics from the following areas:

High-frequency components: design, simulation, measurement
Integrated THz circuits and THz …

We offer topics from the following areas:

High-frequency components: design, simulation, measurement
Integrated THz circuits and THz modules
Nanowire epitaxy and Nano LED technology

https://www.uni-due.de/bhe/abschlussarbeiten.php

In the current semester, the department offers regular seminars on various research topics. The current dates are always announced on the BHE …

In the current semester, the department offers regular seminars on various research topics. The current dates are always announced on the BHE website. All interested parties from other departments and students are cordially invited.

https://www.uni-due.de/bhe/seminar.php

The Laser Confocal Microscope LSM900 from Zeiss combines conventional light microscopy with high-precision topography measurements in one …

The Laser Confocal Microscope LSM900 from Zeiss combines conventional light microscopy with high-precision topography measurements in one instrument and is used for non-contact, fast and high-resolution surface analysis of semiconductors, metals and (semi-)transparent oxides and polymers with a wide range of topographies and dimensions from the mm to the nm range. In addition to optical brightfield microscopy in reflected light, a circular differential interference contrast is also available for the best possible image quality.

For topography measurements the confocal mode or alternatively the total interference contrast (TIC) is used. With the confocal measurement principle, a laser scans over the sample surface and using a confocal pinhole, only the information from the focal plane of the respective measurement point is detected. In this way, an image stack is generated over the entire scanned area, which describes the vertical topography of the sample down to a few nm. The TIC method is used for very thin layers and is based on the phase shift of white light on structures of different heights. In this way, vertical resolution down to the sub-nm range is possible.

All measuring methods can be performed at the same position, so that a holistic analysis of the same sample position is possible. By means of software evaluation roughness, waviness, thickness, step heights, areas, angles, contours etc. can be analyzed contact-free and time-saving.

In the UDE's NanoEngineering course, students learn that the miniaturization of semiconductor components over the past decades has made it possible …

In the UDE's NanoEngineering course, students learn that the miniaturization of semiconductor components over the past decades has made it possible to create compact, high-performance components, and that new physical phenomena are sometimes encountered, but also corresponding challenges arise. Structuring and characterizing the components on this scale requires not only theory but also the appropriate manufacturing technology and equipment. Optical lithography, for example, has established itself as the method for structuring surfaces. In this process, a light-sensitive resist is exposed through a mask and the pattern of the mask is transferred into it. An alternative method is the so-called nanoimprint lithography. Here, the structure is transferred into a mechanically deformable resist by stamping and thus offers a simple method for large-area structuring.

For topological and geometrical analysis of the structures, a local resolution in the range of a few nanometers is necessary. For this purpose, a new atomic force microscope from Nanosurf was purchased. In atomic force microscopy, a 3D topographic measurement of the sample surface is performed by scanning with a nanometer-thin measuring needle. During the scanning of the surface the measuring needle is bent, which is detected by a LASER or by the deflection of the LASER. The students learn how to use the new, modern atomic force microscope and how to evaluate the measurement results.

Rapid data transmission, medical examinations with harmless radiation: High frequency technologies make it possible. Scientists at the University …

Rapid data transmission, medical examinations with harmless radiation: High frequency technologies make it possible. Scientists at the University of Duisburg-Essen (UDE) are researching the necessary semiconductor materials. In the future, they will work even more closely with the Ferdinand Braun Institute, the Leibnitz Institute for High Frequency Technology in Berlin (FBH). A joint laboratory has now been launched.

6G Terahertz communication with more than 100 Gigabit/s data volume, state-of-the-art radars and other applications suitable for everyday use are not possible without semiconductor materials. One of them is indium phosphide (InP). This crystalline substance is important for high-frequency components, but it can only be produced in small quantities and at great expense. The Center for Semiconductor Technology and Optoelectronics (ZHO) at the UDE is working to change this - among other things with a new production facility. A terahertz integration center unique in Germany is currently being built here, which is being funded by the state and the EU with 6.5 million euros.

The semiconductor experts at UDE are now contributing their know-how to the "JointLab InP Devices". "In this way we want to develop circuits and modules for terahertz applications together with our colleagues in Berlin," explains Dr. Nils Weimann. The Professor of High Frequency Electronics is head of the new laboratory.

Within the framework of the "ForLab SmartBeam" funding program of the BMBF, the new metal organic vapor phase epitaxy system CCS6x2FT was purchased …

Within the framework of the "ForLab SmartBeam" funding program of the BMBF, the new metal organic vapor phase epitaxy system CCS6x2FT was purchased from Aixtron for the epitaxial growth of highly crystalline layer systems of phosphide and arsenide compound semiconductors. Such highly crystalline layer packages significantly determine the properties and performance of later semiconductor components. The growth of these crystalline layers is therefore a decisive and critical step in the (further) development of existing and novel devices, such as InP-based heterojunction bipolar transistors for THz-enabled emitters and amplifiers. In its current configuration, the system can be equipped with up to eleven different material sources, thus enabling even the most complex layer systems and offering a high degree of variability in use for existing and future research projects.

The reactor of the plant will be mainly used for the production of HBTs and is state of the art. It is based on the "closed-coupled-showerhead" principle, which means that the process gases for crystal growth hit the growth substrates directly from above from a very small distance. Furthermore, the temperature in the reactor can be precisely controlled by a three-zone heater and a full-surface in situ temperature control. This results in a very uniform growth over the entire reactor surface, while at the same time making efficient use of the expensive starting materials and a controllable growth rate. In addition to temperature control, the reactor is equipped with further state-of-the-art measuring technology, thus enabling monitoring of roughness and layer thickness. The reactor can be equipped with six 2" wafers, three 3" wafers, one 4" or one 6" wafer at the same time. This allows the use of industry-relevant wafer sizes and the transfer of developed processes to industrial processes.
The reactor is already located in the clean room of the ZHO and is currently being integrated into the clean room infrastructure. The commissioning of the reactor is planned for autumn this year.