Publications
2024
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Atomic Wires on Substrates: Physics between One and Two DimensionsSurf. Sci. Reports In Press 7 May (2024)
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Critical Behavior of the Dimerized Si(001) Surface: Continuous Order-Disorder Phase Transition in the 2D Ising Universality ClassPhys. Rev. B 109, 134104 (2024)
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Structural Dynamics at Surfaces by Ultrafast Reflection High Energy Electron DiffractionStruct. Dyn. 11, 021301 (2024)
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Momentum Space Separation of Quantum Path Interferences between Photons and Surface Plasmon Polaritons in Nonlinear Photoemission MicroscopyNanophotonics (2024)
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Disentangling the Electronic and Lattice Contributions to the Dielectric Response of Photoexcited BismuthPhys. Rev. B 109, L041105 (2024)
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A Modular Table-Top Setup for Ultrafast X-Ray DiffractionRev. Sci. Instrum. 95, 013002 (2024)
2023
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Electron Phonon Coupling in Ultrathin Pb Films on Si(111): Where the Heck is the Energy?arXiv: Mesoscale and Nanoscale Physics submitted on 7 Dec 2023
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Cool Cooling Collar for Bake-Out of Temperature-Sensitive DevicesarXiv: Instrumentation and Detectors submitted on 16 Nov 2023
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Sequential Kibble-Zurek Dynamics in the Anisotropic Ising Model of the Si(001) SurfacearXiv: Statistical Mechanics submitted on 27 Oct 2023
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Non-Equilibrium Pathways for Excitation of Bulk and Surface Phonons through Anharmonic CouplingarXiv: Mesoscale and Nanoscale Physics submitted on 24 Oct 2023
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Ultrafast Time Dynamics of Plasmonic Fractional Orbital Angular MomentumACS Photonics (2023)
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Dimer Coupling Energies of the Si(001) SurfacePhys. Rev. Lett. 130, 126203 (2023)
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Angle-Resolved Photoelectron Spectroscopy in a Low-Energy Electron MicroscopeStruct. Dyn. 10, 064304 (2023)
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Focused Surface Plasmon Polaritons Coherently Couple to Electronic States in Above-Threshold Electron EmissionCommun. Phys. 6, 15 (2023)
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Incommensurability and Negative Thermal Expansion of Single Layer Hexagonal Boron NitrideAppl. Surf. Sci. 624, 157156 (2023)DOI: 10.1016/j.apsusc.2023.157156
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Interplay of Kinetic Limitations and Disintegration : Selective Growth of Hexagonal Boron Nitride and Borophene Monolayers on Metal SubstratesACS Nano 17, 17946 (2023)DOI: 10.1021/acsnano.3c04038
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Quantum Pathways of Carrier and Coherent Phonon Excitation in BismuthPhys. Rev. B 107, L180303 (2023)
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Topology of Surface Plasmon Polaritons with Integer and Fractional Orbital Angular MomentumACS Photonics in press (2023)
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Ultrafast Carrier Dynamics and Symmetry Reduction in Bismuth by Nonperturbative Optical Excitation in the Terahertz RangePhys. Rev. B 107, 245140 (2023)
2022
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Quantitative Determination of the Electric Field Strength in a Plasmon Focus from Ponderomotive Energy ShiftsNanophotonics 11, 3687-3694 (2022)
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Ultrafast Transport-Mediated Homogenization of Photoexcited Electrons Governs the Softening of the A1g Phonon in BismuthPhys. Rev. B 106, 014315 (2022)
2021
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Broad Background in Electron Diffraction of 2D Materials as a Signature of Their Superior QualityNanotechnology 32, 505706 (2021)
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Hot Carrier Transport Limits the Displacive Excitation of Coherent Phonons in BismuthAppl. Phys. Lett. 119, 091601 (2021)
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Implementation and Operation of a Fiber-Coupled CMOS Detector in a Low Energy Electron MicroscopeUltramicroscopy 221, 113180 (2020)
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Non-Conventional Bell-Shaped Diffuse Scattering in Low-Energy Electron Diffraction from High-Quality Epitaxial 2D-MaterialsAppl. Phys. Lett. 118, 241902 (2021)
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Phyllotaxis-Inspired Nanosieves with Multiplexed Orbital Angular MomentumeLight 1, (2021)
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Violation of Boltzmann Equipartition Theorem in Angular Phonon Phase Space Slows down Nanoscale Heat Transfer in Ultrathin HeterofilmsNano Lett. 21, 7145–7151 (2021)
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Segregation-Enhanced Epitaxy of Borophene on Ir(111) by Thermal Decomposition of BorazineACS Nano 15, 7421–7429 (2021)
2020
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Adsorbate Induced Manipulation of 1D Atomic Wires : Degradation of Long-Range Order in the Si(553)-Au SystemSurf. Sci. 700, 121673 (2020)
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High Layer Uniformity of Two-Dimensional Materials Demonstrated Surprisingly from Broad Features in Surface Electron DiffractionJ. Phys. Chem. Lett. 11, 8937–8943 (2020)
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Thermally Induced Crossover from 2D to 1D Behavior in an Array of Atomic Wires : Silicon Dangling-Bond Solitons in Si(553)-AuPhys. Rev. Lett. 124, 016102 (2020)
Tracking the Ultrafast Nonequilibrium Energy Flow between Electronic and Lattice Degrees of Freedom in Crystalline NickelPhys. Rev. B 101, 100302(R) (2020)
Ultrafast Vector Imaging of Plasmonic Skyrmion Dynamics with Deep Subwavelength ResolutionScience 368, 6489 (2020)
Vector Microscopy : Nonlinear Photoemission Microscopy Reveals Plasmonic FieldsImaging & Microscopy 4, 34 (2020)
2019
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Diffraction Paradox : An Unusually Broad Diffraction Background Marks High Quality GraphenePhys. Rev. B 100, 155307 (2019)
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Equilibrium Shape of Single-Layer Hexagonal Boron Nitride Islands on IridiumSci. Rep. 9, 19553 (2019)
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Pulsed Electron Gun for Electron Diffraction at Surfaces with Femtosecond Temporal Resolution and High Coherence LengthRev. Sci. Instrum. 90, 045119 (2019)
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Rapid Onset of Strain Relief by Massive Generation of Misfit Dislocations in Bi(111)/Si(001) HeteroepitaxyAppl. Phys. Lett. 114, 081601 (2019)
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Condensation of Ground State from a Supercooled Phase in the Si(111)-(4 × 1) → (8 × 2)-Indium Atomic Wire SystemStruct. Dyn. 6, 045101 (2019)
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Decelerated Lattice Excitation and Absence of Bulk Phonon Modes at Surfaces : Ultra-Fast Electron Diffraction from Bi(111) Surface Upon fs-Laser ExcitationStruct. Dyn. 6, 065101 (2019)
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Precision Plasmonics with Monomers and Dimers of Spherical Gold Nanoparticles : Nonequilibrium Dynamics at the Time and Space LimitsJ. Phys. Chem. C 123, 13181–13191 (2019)
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Spatio-Temporal Analysis of an Efficient Fresnel Grating Coupler for Focusing Surface Plasmon PolaritonsACS Photonics 6, 600–604 (2019)
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Temperature-Controlled Rotational Epitaxy of GrapheneNano Lett. 19, 4594 (2019)
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Ultrafast Electron Diffraction from a Bi(111) Surface : Impulsive Lattice Excitation and Debye Waller Analysis at Large Momentum TransferStruct. Dyn. 6, 035101 (2019)
2018
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Direct Observation of Surface Plasmon Polariton Propagation and Interference by Time-Resolved Imaging in Normal-Incidence Two Photon Photoemission MicroscopyPlasmonics 13, 239 (2018)
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Lateral Heterostructures of Hexagonal Boron Nitride and Graphene : BCN Alloy Formation and Microstructuring MechanismAppl. Surf. Sci. 455, 1086 (2018)
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Ultrafast Switching in an Atomic Wire System at SurfacesMRS Bulletin 43, 512-519 (2018)
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Optically Excited Structural Transition in Atomic Wires on Surfaces at the Quantum Limit: a Femtosecond Ultrafast Surface Electron Diffraction StudyProc. SPIE 10673, Advances in Ultrafast Condensed Phase Physics, 1067304 (2018)
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Observing the Sub-Femtosecond Dynamics of Plasmonic Bragg Reflectors by Time-Resolved Photoemission Electron MicroscopyProc. SPIE 10530, Ultrafast Phenomena and Nanophotonics XXII, 105301A (2018)
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A Space-Time Analysis of Electron Emission from a Focusing Structure for Surface Plasmon Polaritons using Photoemission MicroscopyProc. SPIE 10530, Ultrafast Phenomena and Nanophotonics XXII, 105300C (2018)
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Non-Equilibrium Lattice Dynamics of One-Dimensional In Chains on Si(111) upon Ultrafast Optical ExcitationStruct. Dyn. 5, 025101 (2018)
2017
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Imaging the Nonlinear Plasmoemission Dynamics of Electrons from Strong Plasmonic FieldsNano Lett. 17, 6569–6574 (2017)
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Microanalysis of Single-Layer Hexagonal Boron Nitride Islands on Ir(111)Appl. Surf. Sci. 420, 504-510 (2017)
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Nanoscale Interfacial Heat Transport of Ultrathin Epitaxial Hetero Films: Few Monolayer Pb(111) on Si(111)Appl. Phys. Lett. 110, 243103 (2017)
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Optically Excited Structural Transition in Atomic Wires on Surfaces at the Quantum LimitNature 544, 207 (2017)
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Revealing the Subfemtosecond Dynamics of Orbital Angular Momentum in Nanoplasmonic VorticesScience 355, 1187 (2017)
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Short-Range Surface Plasmonics: Localized Electron Emission Dynamics from a 60-nm Spot on an Atomically Flat Single-Crystalline Gold SurfaceScience Advances 3, e1700721 (2017)
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Subfemtosecond and Nanometer Plasmon Dynamics with Photoelectron Microscopy: Theory and Efficient SimulationsACS Photonics 4, 2461–2469 (2017)
2016
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A Combined STM and SPA-LEED Study of the "Explosive" Nucleation and Collective Diffusion in Pb/Si(111)Surf. Sci. 646, 50 (2016)
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Analysis of the Contrast in Normal-Incidence Surface Plasmon Photoemission Microscopy in a Pump–Probe Experiment with Adjustable PolarizationAppl. Phys. B 122, 90 (2016)
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Decay of Isolated Hills and Saddles on Si(001)Mat. Res. Exp. 3, 8 (2016)
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Dy Uniform Film Morphologies on Graphene Studied with SPA-LEED and STMCarbon 108, 283-290 (2016)
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Two-Dimensional Interaction of Spin Chains in the Si(553)-Au Nanowire SystemPhys. Rev. B 94, 161403 (2016)
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Spatio-Temporal Imaging of Surface Plasmon Polaritons in Two Photon Photoemission MicroscopyPlasmonics 9921, 992110 (2016)
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Thickness Dependent Electron-Lattice Equilibration in Thin Bi Films Studied by Time-Resolved MeV Electron DiffractionInternational Conference on Ultrafast Phenomena UTh4A.49 (2016)
2015
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Barrier-Free Subsurface Incorporation of 3D Metal Atoms into Bi(111) FilmsPhys. Rev. B 91, 195441
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Foreword for the Special Issue on the Ninth International Workshop on Low Energy Electron Microscopy and Photoemission Electron MicroscopyUltramicroscopy 159, V-VI (2015)
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Nanoscale heat transport from Ge hut, dome, and relaxed clusters on Si(001) measured by ultrafast electron diffractionAppl. Phys. Let. 106, 053108 (2015)
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Nanoscale Thermal Transport in Self-Organized Epitaxial Ge Nanostructures on Si(001)Semicond. Sci. Tech. 30, 105027 (2015)
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Spot Profile Analysis and Lifetime Mapping in Ultrafast Electron Diffraction : Lattice Excitation of Self-Organized Ge Nanostructures on Si(001)Struc. Dyn. 2, 035101 (2015)
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Thickness-Dependent Electron-Lattice Equilibration in Laser-Excited Thin Bismuth FilmsNew J. Phys. 17, 113047 (2015)
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Signatures of Plasmoemission in Two Photon Photoemission Electron MicroscopySPIE Proceedings XIX, 93610V (2015)
2014
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Anisotropy of Electromigration-Induced Void and Island DriftJour. of Phys. Condensed Matter 26, 055005 (2014)
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Comparing Ultrafast Surface and Bulk Heating Using Time-Resolved Electron DiffractionAppl. Phys. Let. 104, 161611 (2014)
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Europium Underneath Graphene on Ir(111) : Intercalation Mechanism, Magnetism, and Band StructurePhys. Rev. B 90, 235437 (2014)
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Hysteresis Proves that the In/Si(111) (8x2) to (4x1) Phase Transition is First-OrderPhys. Rev. B 89, 121107(R) (2014)
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In-Situ High-Resolution Low Energy Electron Diffraction Study of Strain Relaxation in Heteroepitaxy of Bi(111) on Si(001) : Interplay of Strain State, Misfit Dislocation Array and Lattice ParameterThin Solid Films 570, 159-163 (2014)
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Lattice Degradation by Moving Voids During Reversible ElectromigrationJ. Appl. Phys. 116, 034502
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Normal-Incidence Photoemission Electron Microscopy (NI-PEEM) for Imaging Surface Plasmon PolaritonsPlasmonics 9, 1401–1407 (2014)
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Strain State, Film and Surface Morphology of Epitaxial Topological Insulator Bi2Se3 Films on Si(111)Thin Solid Films 564, 241-245 (2014)
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Electrochemical Route to Large-Area Mono-Crystalline Gold Platelets for High-Quality Plasmonic ApplicationsAdvanced Photonics JTu3A.60 (2014)
2013
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Effect of Adsorbed Magnetic and Non-Magnetic Atoms on Electronic Transport Through Surfaces with Strong Spin-Orbit CouplingMaterials Science and Engineering Technology 44, 210-217 (2013)
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Epitaxial Growth of the Topological Insulator Bi2Se3 on Si(111) : Growth Mode, Lattice Parameter, and Strain StateAppl. Phys. Lett. 103, 111909 (2013)
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Frigge et al. Reply : Comment on “Atomistic Picture of Charge Density Wave Formation at Surfaces”Phys. Rev. Lett. 111, 149602 (2013)
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Interaction of Light and Surface Plasmon Polaritons in Ag Islands Studied by Nonlinear Photoemission MicroscopyUltramicroscopy 130, 53 (2013)
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Lattice Dependent Motion of Voids During ElectromigrationJ. Appl. Phys. 113, 134505 (2013)
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Mode Conversion and Long-Lived Vibrational Modes in Lead Monolayers on Silicon (111) After Femtosecond Laser Excitation : A Molecular Dynamics SimulationPhys. Rev. B 88, 115419 (2013)
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To tilt or not to tilt : correction of the distortion caused by inclined sample surfaces in low-energy electron diffractionUltramicroscopy 133, 35-40 (2013)
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Ultra-Fast Electron Diffraction at Surfaces: From Nanoscale Heat Transport to Driven Phase TransitionsUltramicroscopy 127, 2-8 (2013)
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Ultrafast Laser-Induced Melting and Ablation Studied by Time-Resolved Diffuse X-Ray ScatteringEPJ Web of Conferences 41, 04013 (2013)
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Ultrafast Time Resolved Reflection High Energy Electron Diffraction with Tilted Pump Pulse FrontsEPJ Web of Conferences 41, 10016 (2013)
2012
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Atomistic Picture of Charge Density Wave Formation at SurfacesPhys. Rev. Let. 109, 186101 (2012)
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Heat Transport Through Interfaces with and without Misfit Dislocation ArraysJ. of Mater. Research 27, 2718-2713 (2012)
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High-Quality Epitaxial Bi(111) Films on Si(111) by Isochronal AnnealingThin Solid Films 520, 6905-6908 (2012)
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Impact of C60 Adsorption on Surface Plasmon Polaritons on Self-Assembled Ag(111) Islands on Si(111)Plasmonics 7, 229-233 (2012)
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Interplay of Wrinkles, Strain, and Lattice Parameter in Graphene on IridiumNano Lett. 12, 678-682 (2012)
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Manipulation of Electronic Transport in the Bi(111) Surface StatePhys. Rev. Let. 108, 266804 (2012)
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Scattering at Magnetic and Nonmagnetic Impurities on Surfaces with Strong Spin-Orbit CouplingPhys. Rev. B 86, 195432 (2012)
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Simulation of Electromigration Effects on Voids in Monocrystalline Ag FilmsPhys. Rev. B 85, 035449 (2012)
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The Interplay of Topography and Energy Dissipation in Pentacene Thin FilmsJournal of Electron Spectroscopy and Related Phenomena 185, 436-440 (2012)
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Transient Anisotropy in the Electron Diffraction of Femtosecond Laser-Excited BismuthNew J. Phys. 14, 103031 (2012)
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Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001)Nanoscale Thermoelectrics 1456, 45–50 (2012)
2011
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Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low TemperatureACS Nano 5, 1313–1320 (2011)
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Epitaxial Ag Wires with a Single Grain Boundary for ElectromigrationRev. Sci. Instrum. 82, 123907 (2011)
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Growth Temperature Dependent Graphene Alignment on Ir(111)Appl. Phys. Lett. 98, 141903 (2011)
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Lost in Reciprocal Space? : Determination of Scattering Condition in Spot Profile Analysis Low Energy Electron DiffractionRev. Sci. Instrum. 82, 035111 (2011)
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Shape, Orientation, and Crystalline Composition of Silver Islands on Si(111)IBM Journal of Research and Development 55, 9:1-9:6 (2011)
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Dynamics of Reconstructed Zones Formed Around Islands on Si During Desorption : Diffusion Made VisibleProceedings of the ALC 11 Coference 372 (2011)
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Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films : Bi(111)/Si(001) and Bi(111)/Si(111)MRS Online Proceedings Library 1404, 72–77 (2012)
2010
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Anisotropy of Ag Diffusion on Vicinal Si SurfacesElec. J. of Surf. Sci. and Nanotechnol. 8, 372-376 (2010)
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Extreme Phonon Softening in Laser-Excited Bismuth - Towards an Inverse Peierls-TransitionMRS Symp. Proc. 1230E, MM03-05 (2010)
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Imaging Diffusion Fields on a Surface with Multiple Reconstructions: Ag/Si(111)New J. Phys. 12, 103019 (2010)
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Nonlinear Photoemission Microscopy with Surface Plasmon PolaritonsMicroscopy and Microanalysis 16, 502–503 (2010)
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Two-Dimensional Electron Transport and Scattering in Bi(111) Surface StatesElec. J. of Surf. Sci. and Nanotechnol. 8, 27-31 (2010)
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Coherent Acoustic and Optical Phonons in Laser-Excited Solids Studied by Ultrafast Time-Resolved X-Ray DiffractionAIP Conf. Proc. 1278, 558-566 (2010)
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The Role of Thermal and Electronic Pressure in the Picosecond Acoustic Response of Femtosecond Laser-Excited SolidsMRS Online Proceedings Library volume 1230, 603 (2009)
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Transient reversal of a peierls-transition : Extreme phonon softening in laser-excited bismuthInternational Conference on Ultrafast Phenomena UP2010, ME41 (2010)
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Ultra-Fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon SurfacesMRS Symp. Proc. 1230E, MMM06-03 (2010)
2009
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Exciton Sensitive Microscopy of Anthracene Monolayers on Si(111)Organic Electronics 10, 446-452 (2009)
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Nanoscale Dislocation Patterning in Bi(1 1 1)/Si(0 0 1) HeteroepitaxySurf. Sci. 603, 2057-2061 (2009)
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Nucleation and Initial Growth in the Semimetallic Homoepitaxial System of Bi on Bi(111),Phys. Rev. B 79, 193306 (2009)
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Selecting a Single Orientation for Millimeter Sized Graphene SheetsAppl. Phys. Lett. 95, 121901 (2009)
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Stable Tungsten Disilicide Contacts for Surface and Thin Film Resistivity MeasurementsJ. Vac. Sci. Technol. B 27, 180-183 (2009)
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Electromigration and Potentiometry Measurements of Single-Crystalline Ag Nanowires under UHV conditionsJ. Phys.: Condens. Matter 21, 265601 (2009)
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Electronic Acceleration of Atomic Motions and Disordering in BismuthNature 458, 56–59 (2009)
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In Situ Observation of Stress Relaxation in Epitaxial GrapheneNew J. Phys. 11, 113056 (2009)
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Phonon Confinement Effects in Ultrathin Epitaxial Bismuth Films on Silicon Studied by Time-Resolved Electron DiffractionPhys. Rev. B 80, 24307 (2009)
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Space Charge Effects in Photoemission Electron Microscopy Using Amplifed Femtosecond Laser PulsesJ. Phys.: Condens. Matter 21, 314003 (2009)
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The Influence of Anisotropic Diffusion on Ag Nanowire FormationJ. Phys.: Condens. Matter 21, 314023 (2009)
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Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction"MRS Proceedings 1172, T04-T08 (2009)
2008
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Absence of Surface Stress Change During Pentacene Thin Film Growth on the Si(111)-(7x7) Surface : A Buried Reconstruction InterfaceNew J. of Physcis 10, 023037 (2008)
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Au Stabilization and Coverage of Sawtooth Facets on Si Nanowires Grown by Vapor-Liquid-Solid EpitaxyNano Letters 8, 3065 (2008)
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Der Widerstand eines Atoms : Elektromigration im MiniaturformatEssener Unikate: Berichte aus Forschung und Lehre 32, 8 (2008)
Disorder-Mediated Ordering by Self-Interfactant Effect in Organic Thin Film Growth of Pentacene on SiliconOrganic Electronics 9, 461 (2008)
Epitaxial Bi(111) Films on Si(001) : Strain State, Surface Morphology, and Defect StructureThin Solid Films 516, 8227-8231 (2008)
Growth of g Nanowires on Au-Pre-Facetted 4° Vicinal Si(0 0 1)Surf. Sci. 602, 1852-1857 (2008)
Heat transport in nanoscale heterosystems: a numerical simulation and analytical solutionJ. of Nanomat. 2008, 590609 (2008)
LEEM/PEEM Study of Anisotropic Diffusion Fields in the Ag/Si(001) SystemMater. Res. Soc. Symp. Proc. 1088E, 1088-W05-04 (2008)
Real-Time View of Mesoscopic Surface DiffusionPhys. Rev. Lett. 100, 016103 (2008)
The Application of Low Energy Electron Microscopy and Photoemission Electron Microscopy to Organic Thin FilmsJ. Phys.: Condens. Matter 20, 184007 (2008)
Thermal Response of Epitaxial Thin Bi Films on Si(001) Upon Femtosecond Laser Excitation Studied by Ultrafast Electron DiffractionPhys. Rev. B 77, 125410 (2008)
Ultrathin Epitaxially Grown Bismuth (111) MembranesAppl. Phys. Lett. 93, 93102 (2008)2007
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A Pulsed Electron Gun for Ultrafast Electron Diffraction at SurfacesRev. Sci. Instrum. 78, 013906 (2007)
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Diffraction of Strongly Convergent X-Rays from Picosecond Acoustic TransientsAppl. Phys. A 87, 7-11 (2007)
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Domain Sensitive Contrast in Photoelectron Emission MicroscopyPhys. Rev. Lett. 99, 196102 (2007)
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Femtosecond Photoemission MicroscopySurf. Sci. 601, 4700-4705 (2007)
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In situ Monitoring of Surface Plasmons in Single-Crystalline Ag NanowiresSurf. Sci. 601, 4541-4545 (2007)
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Lattice-Matching Periodic Array of Misfit Dislocations: Heteroepitaxy of Bi(111) on Si(001)Phys. Rev. B 76, 035337 (2007)
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Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) HeteroepitaxyMRS Online Proceedings Library Archive 1059, 707 (2007)
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Photoemission Electron Microscopy Study of Anthracene Growth on Si(111)Surface Science 601, 1701-1704 (2007)
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Ultrafast bond softening in Bismuth: Mapping a solid`s interatomic potential with X-raysScience 315, 633-636 (2007)
2006
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Analysis of Mesoscopic Patterns Formed by the Au-Induced Faceting of Vicinal Si(001)J. Phys.: Condens. Matter 18, S1 (2006)
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Dynamics of an Ising Chain under Local Excitation: An STM Study of Si(100) Dimer Rows at T = 5KPhys. Rev. Lett. 96, 026102 (2006)
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Electromigration in Gold and Single Crystalline Silver Nanowires.AIP Conf. Proc. 817, 65–70 (2006)
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Electromigration in Single-Crystalline Self-Organized Silver NanowiresAppl. Phys. Lett. 88, 053122 (2006)
Fringe Fields in Nonlinear Photoemission MicroscopyPhys. Rev.B 73, 115416 (2006)
Lattice Accommodation of Epitaxial Bi(111) Films on Si(001) Studied with SPA-LEED and AFM,Phys. Rev. B 74, 195340 (2006)
Less Strain Energy Despite Fewer Misfit Dislocations: The impact of orderingPhys. Rev. Lett. 96, 066101 (2006)
Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction,New J. Phys. 8, 190 (2006)
Three-Dimensional Size Determination of Particles with Photoelectron Emission MicroscopyAppl. Phys. Lett. 89, 241908 (2006)
Ultrafast Electron Diffraction at Surfaces after Laser ExcitationSurface Science 600, 4094-4098 (2006)
2005
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Compact and Transferable Threefold Evaporator for Molecular Beam Epitaxy in Ultrahigh VacuumRev. Sci. Instrum. 76, 083906 (2005)
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High Temperature Self-Assembly of Ag Nanowires on Vicinal Si(001)J. Phys.: Condens. Matter 17, S1407 (2005) Nr. 16,
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Low Energy Electron Dffraction of Epitaxial Growth of Bismuth on Si(111)Surf. Sci. 576, 56-60 (2005)
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Reciprocal Space Mapping by Spot Profile Analyzing Low Energy Electron DiffractionRev. Sci. Instrum. 76, 085102 (2005)
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Strain State Analysis of Hetero-Epitaxial SystemsEurophysics Lett. 69, 570-578 (2005)
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Surfactant-Mediated Epitaxy of Ge on Si(111): beyond the surfaceAppl. Phys. Lett. 86, 111910 (2005)
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Ultrafast X-Ray DiffractionUltrafast Phenomena XIV 79, 170–174 (2005)
2004
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Direct Observation of Reconstruction Induced Changes of Surface Stress for Sb on Si(111)Analytical and Bioanalytical Chemistry 379, 582-587 (2004)
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Precise Calibration for Surface Stress Induced Optical Deflection MeasurementsRev. Sci. Instrum. 75, 2211–2212 (2004)
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Strain Relief During Ge Hut Cluster Formation on Si(001) Studied by High Resolution LEED and Surface-Stress-Induced Optical Deflection,Phys. Rev. B 70, 235313 (2004)
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Transition in Growth Mode by Competing Strain Relaxation Mechanisms: Surfactant Mediated Epitaxy of SiGe alloys on SiAppl. Phys. Lett. 85, 3056–3058 (2004)
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Characterizing Single Crystal Surfaces using High Resolution Electron DiffractionAnalytical and Bioanalytical Chemistry 379, 588–593 (2004)
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Chopped Sample Heating for Quantitative Profile Analysis of Low Energy Electron Diffraction Spots at High TemperaturesRev. Sci. Instrum. 75, 4911–4915 (2004)
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Flexible Microprocessor-Based Evaporation ControllerRev. Sci. Instrum. 75, 5288–5292 (2004)
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Impact of Thermal Dependence of Elastic Constants on Surface Stress MeasurementsRev. Sci. Instrum. 75, 1357–1358 (2004)
2003
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Finite Collection Time Effects in Autocovariance Function MeasurementsJ. Appl. Phys. 93, 2229–2235 (2003)
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Ge on Si(001) - a Hetero Epitaxial Playground for Surface ScienceSurf. Sci. 537, 1-3 (2003)
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Femtosecond X-Ray Measurement of Coherent Lattice Vibrations near the Lindemann Stability LimitNature 422, 287–289 (2003)
2002
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Erratum to: Local Au Coverage as Driving Force for Au Induced Faceting of Vicinal Si(001):a LEEM and XPEEM StudySurf. Sci. 496, 151 (2002)
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Kinetics of Au Induced Faceting of Vicinal Si(111)Surf. Sci. 512, 117-127 (2002)
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Self-organisation of Ge nanostructures on i(111): A SPA-LEED and STM Study,Omicron Newsletter 5, 2 (2002)
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Si(001)Step Dynamics: A Temporal Low-Energy Electron Diffraction StudyPhys. Rev. B 65, 075312 (2002)
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Step and Kink Correlations on Vicinal Ge(100) Surfaces Investigated by Electron DiffractionPhys. Rev. B 65, 235316 (2002)
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Third-generation generation cone-shaped SPA-LEEDRev. Sci. Instrum. 73, 2958–2962 (2002)
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Time-Resolved X-Ray Diffraction Study of Ultrafast Structural Dynamics in Laser-Excited SolidsUltrafast Phenomena XIII 71, 36 (2002)
2001
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Au Induced Reconstructions on Si(111)Surf. Sci. 488, 233-238 (2001)
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Characterization of Ge δ-Doped Si(111) with RBS-ChannelingSurface and Interface Analysis 31, 754-760 (2001)
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Femtosecond X-Ray Measurement of Ultrafast Melting and Large Acoustic TransientsPhys. Rev. Lett. 87, 225701 (2001)
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Local Au Coverage as Driving Force for Au Induced Faceting of Vicinal Si(001) : A LEEM and XPEEM StudySurf. Sci. 480, 103-108 (2001)DOI:ext: DOI: 10.1016/S0039-6028(01)00824-X
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Spatial Variation of Au Coverage as the Driving Force for Nanoscopic Pattern FormationPhys. Rev. Lett. 86, 5088 (2001)
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Thermal activation of dislocation array formationAppl. Phys. Lett. 79, 2387–2389 (2001)
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Transient Lattice Dynamics in fs-Laser-Excited Semiconductors Probed by Ultrafast X-Ray DiffractionJ. Phys. IV France 11, Pr2-473-Pr2-477 (2001)DOI:ext: DOI: 10.1051/jp4:2001290
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Ultrafast X-Ray Measurement of Laser Heating in Semiconductors: Parameters Determining the Melting Threshold"Phys. Rev. B 63, 193306 (2001)
2000
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Anharmonic Lattice Dynamics in Germanium Measured with Ultrafast X-Ray DiffractionPhys. Rev. Lett. 85, 586 (2000)
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Au Induced Regular Ordered Striped Domain Wall Structure of a (5x3) Reconstruction on Si(001) Studied by STM and SPA-LEEDSurf. Sci. 454–456, 851-855 (2000)
-
Formation of Hill and Valley Structures on Si(001) Vicinal Surfaces Studied by Spot-Profile-Analyzing LEEDPhys. Rev. B 61, 5672 (2000)
-
Hydrogen Induced Domain-Wall Structure on Si(113)Surf. Sci. 458, 147-154 (2000)
-
Time-Resolved X-Ray Diffraction Study of Ultrafast Acoustic Phonon Dynamics in Ge/Si HeterostructuresUltrafast Phenomena XII 66, 281–283 (2000)
1999
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3-dim. Reciprocal Space mapping of a Quasi Periodic Misfit Dislocation ArrayHASYLAB/DESY Annual Report (1999)
-
Au Induced Giant Faceting of Vicinal Si(001)Elettra Highlights 98-99, 42-44 (1999)
-
Au Induced Giant Faceting of Vicinal Si(001)Surf. Sci. 433-435, 475-480 (1999)
-
Bi surfactant mediated epitaxy of Ge on Si(111)Thin Solid Films 343-344, 579-582 (1999)
-
Detection of Nonthermal Melting by Ultrafast X-Ray DiffractionScience 286, 1340-1342 (1999)
-
Fabrication of High-Mobility Ge p-Channel MOSFETs on Si SubstratesElec. Lett. 35, 503-504 (1999)
-
Gold-Induced Faceting on a Si(001) Vicinal Surface: SPA-LEED and REM StudyPhys. Rev. B 59, 2363-2375 (1999)
-
Gold-Induced Faceting on a Si(hhm) Surface (m/h=1.4-1.5) Studied by SPA-LEEDSurf. Sci. 432, 69 (1999)
-
Growth of Semiconductor Layers Studied by Spot Profile Analysing Low Energy Electron DiffractionZeitschrift für Kristallographie 214 , 591(1999)
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Interplay of Surface Morphology and Strain Relief During Surfactant Mediated Epitaxy of Ge on SiAppl. Phys. A 69, 481-488 (1999)
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Spot Profile Analysis Low Energy Electron Diffraction of Semiconductor GrowthZeitschrift für Kristallographie 214, 591-629 and 684-721 (1999)
-
Surfactant-Mediated Epitaxy of Ge on Si: Progress in Growth and Electrical CharacterizationThin Solid Films 336, 29-33 (1999)
1998
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Adsorption Induced Giant Faceting of Vicinal Si(001)Thin Solid Films 336, 16-21 (1998)
-
Giant Faceting of Vicinal Si(001) Induced by Au AdsorptionSurf. Rev. Lett. 5, 1167-1178 (1998)
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High Concentration Bi δ-Doping Layers on Si(001)Appl. Surf. Sci. 123/124, 538-541 (1998)
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Macroscopic One-Dimensional Facetting of Si(100) Upon Au AdsorptionSurf. Sci. 402-404, 464-469 (1998)
-
Step Arrangement Control of Vicinal Si(001) by Ag AdsorptionAppl. Surf. Sci. 123/124, 694-698 (1998)
-
Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111)HASYLAB/DESY Annual Report 0 (1998)
-
Surface Morphology Changes Due to Adsorbates and Due to Electron BombardementPhysica A 261, 1-12 (1998)
-
Surfactant-Grown Low-Doped Germanium Layers on Silicon with High Electron MobilitiesThin Solid Films 321, 125-130 (1998)
-
X-Ray Characterization of Buried δ LayersSurf. Rev. Lett. 5, 145-149 (1998)
1997
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Ag-Mediated Step-Bunching Instability on Vicinal Si(100)Surf. Sci. 394, 60-70 (1997)
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Enhanced Sb Segregation in Surfactant-Mediated Heterogrowth: High-Mobility, Low-Doped Ge on SiAppl. Phys. Lett. 71, 924-926 (1997)
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High Electron Mobilities in Surfactant-Grown Germanium on Silicon SubstratesJap. J. Appl. Phys. 36, L1082 (1997)
1996
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Adsorbate Induced Change of Equilibrium Surface During Crystal Growth: Si on Si(111)/HPhys. Rev. Lett. 76, 2953-2956 (1996)
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Stress Reduction and Interface Quality of Buried Sb δ-Layers on Si(001)Appl. Phys. Lett. 69, 2906-2908 (1996)
-
Towards Perfect Ge δ Layers on Si(001)Appl. Phys. Lett. 68, 1394-1396 (1996)
-
X-Ray Interface Characterization of Ge δ Layers on Si(001)Physica B 221, 96-100 (1996)
1995
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Ag-Induced Multi-Step Formation on Si(001)Appl. Phys. Lett. 67, 2185-2187 (1995)
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Epitaxial layer growth of Ag(111)-films on Si(100)Surf. Sci. 331-333, 575-579 (1995)
Ge &delta-Layers on Si(111) and Si(001) Grown by MBE and SPEMRS Proceedings 375, 177-180 (1995)
Influence of H on Low Temperature Si(111) HomoepitaxySurf. Sci. 337, L777-L782 (1995)
Interface Roughening of Ge δ Layers on Si(111)Phys. Rev. B 51, 7598 (1995)
Lattice accomodation of Si(001) and Ag(111)Phys. Rev. B 52, 10764-10767 (1995)
Reconstruction Dependent Orientation of Ag(111) Films on Si(001)Phys. Rev. B 52, 13745 (1995)
Grundschritte der Epitaxie: Sichtbarmachung mit Elektronenbeugung und RastertunnelmikroskopieNova Acta Leopoldina 295, 31-51 (1995)
1994
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Homoepitaxy of Si(111) is Surface Defect MediatedSurf. Sci. Lett. 321, L129-L136 (1994)
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Lattice Matching Periodic Interfacial Dislocation Network in Surfactant-Mediated Growth of Ge on Si(111)Phys. Stat. solidi 146, 337-352 (1994)
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Strain Relief by Micro Roughness in Surfactant Mediated Growth of Ge on Si(001)Phys. Rev. B 50, 11640-11652 (1994)
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Surfactant-Mediated Growth of Ge on Si(111)Phys. Rev. B 50, 10811-10822 (1994)
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Surfactant-Stabilized Strained Ge Cones on Si(100)Phys. Rev. B 49, 2637-2650 (1994)
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Surfactants: Perfect Heteroepitaxy of Ge on Si(111)Appl. Phys. A 59, 503 (1994)
1993
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Formation of Interfacial Dislocation Network in Surfactant Mediated Growth of Ge on Si(111) Investigated by Spa-Leed : Part ISurf. Scie. 298, 29-42 (1993)
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Surface Morphology and Strain Relief in Surfactant Mediated Growth of Ge on Si(111)Scanning Microscopy 7, 481-488 (1993)
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Surfactant Induced Reversible Changes of Surface MorphologyPhys. Rev. Lett. 71, 3170-3173 (1993)
-
The Interplay of Surface Morphology and Strain Relief in Surfactant Mediated Growth of Ge on Si(111)Surf. Sci. 284, 53-66 (1993)
1992
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Growth of Monoatomic Layers: Investigations with Electron Diffraction and Scanning Tunneling MicroscopyAdvances in Solid State Physics 32, 333 (1992)
-
Layer-by -Layer Growth of Germanium on Si(100): Strain Induced Morphology and the Influence of SurfactantsUltramicroscopy 42–44, 832 (1992)
1991
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A New Two-Dimensional Particle Detector for a Toroidal Electrostatic AnalyzerRev. Sci. Instrum. 62, 2679 (1991)
-
Defect Self-Annihilation in Surfactant-Mediated Epitaxial GrowthPhys. Rev. Lett. 67, 1130 (1991)
-
Strain-Relief Mechanism in Surfactant-Grown Epitaxial Germanium Films on Si(111)Phys. Rev. B 44, 12894-12902 (1991)
1990
-
Influence of Surfactants in Ge and Si Epitaxy on Si(001),Phys. Rev. B 42, 11682 (1990)
1989
-
SPA-LEED Studies of Defects in Thin Epitaxial NiSi2 Layers on Si(111)Appl. Surf. Sci. 41–42, 230 (1989)
-
The Initial Stages of Growth of Silicon on Si(111) by Spot Profile Analysing Low-Energy Electron DiffractionThin Solid Films 183, 213 (1989)
1988
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Nucleation and Growth During Molecular Beam Epitaxy (MBE) of Si on Si(111)Surf. Sci. 200, 235-246 (1988)
-
Low-Energy Electron Diffraction Investigations of Si Molecular-Beam Epitaxy on Si(100)Thin Solid Films 2, 727-730 (1988)
1987
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LEED Studies of Si Molecular Beam Epitaxy on Si(111)J. Cryst. Growth 81, 428-433 (1987)